DocumentCode :
2590072
Title :
Some Physical Mechanisms Contributing to Tunnel Diode Failure
Author :
Nanavati, R.P.
Author_Institution :
Syracuse University
fYear :
1962
fDate :
Sept. 1962
Firstpage :
214
Lastpage :
222
Keywords :
Electronic equipment testing; Electrons; Failure analysis; Gallium arsenide; III-V semiconductor materials; Lattices; Semiconductor diodes; Temperature; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1962. First Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1962.359997
Filename :
4202003
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2590072
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