DocumentCode
2590072
Title
Some Physical Mechanisms Contributing to Tunnel Diode Failure
Author
Nanavati, R.P.
Author_Institution
Syracuse University
fYear
1962
fDate
Sept. 1962
Firstpage
214
Lastpage
222
Keywords
Electronic equipment testing; Electrons; Failure analysis; Gallium arsenide; III-V semiconductor materials; Lattices; Semiconductor diodes; Temperature; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Failure in Electronics, 1962. First Annual Symposium on the
Conference_Location
Chicago, IL, USA
ISSN
0097-2088
Type
conf
DOI
10.1109/IRPS.1962.359997
Filename
4202003
Link To Document