Title :
Integration and reliability issues of Cu/SiOC interconnect for ArF/90 nm node SoC manufacturing
Author :
Noguchi, J. ; Oshima, T. ; Tanaka, U. ; Sasajima, K. ; Aoki, H. ; Sato, K. ; Ishikawa, K. ; Saito, T. ; Konishi, N. ; Hotta, S. ; Uno, S. ; Kikushima, K.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
Cu/SiOC interconnect technology for ArF/90 nm node SoC manufacturing was investigated. This paper describes the integration and reliability issues. With regard to integration technologies, CMP delamination, SiOC damage and short defects on the trench bottom were improved dramatically. As to reliabilities, SM (stress migration), EM (electromigration) and TDDB (time dependent dielectric breakdown) were studied. Cu diffusion with via resistance increase by high temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integrated process was mature and sufficiently reliable for the operation condition.
Keywords :
chemical mechanical polishing; copper; electric breakdown; electric resistance; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; photolithography; silicon compounds; system-on-chip; thermal stresses; 90 nm; ArF; ArF process; ArF process-based SoC manufacturing; CMP delamination; Cu diffusion; Cu-SiOC; Cu/SiOC interconnect technology; SiOC damage; TDDB degradation; electromigration; high temperature stress; integrated process; integration issues; operation condition; reliability issues; stress migration; time dependent dielectric breakdown; trench bottom short defect; via resistance; Adhesives; Atomic layer deposition; Delamination; Dielectrics; Etching; Manufacturing; Optical films; Random access memory; Samarium; Stress;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269337
