Title :
Low voltage, scalable nanocrystal flash memory fabricated by templated self assembly
Author :
Guarini, K.W. ; Black, C.T. ; Zhang, Y. ; Babich, I.V. ; Sikorski, E.M. ; Gignac, L.M.
Author_Institution :
IBM Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We introduce a new method for building nanocrystal flash memory devices that achieves precise control of nanocrystal size and position. Nanocrystal dimensions are defined via polymer self assembly, facilitating device scaling. Devices exhibit low voltage memory operation with promising retention and endurance properties.
Keywords :
flash memories; integrated circuit reliability; low-power electronics; nanoelectronics; nanostructured materials; polymer films; self-assembly; device scaling; low voltage memory operation; low voltage scalable nanocrystal flash memory; memory endurance properties; memory retention; nanocrystal dimensions; nanocrystal flash memory devices; nanocrystal position control; nanocrystal size control; polymer self assembly; templated self assembly; Fabrication; Flash memory; Low voltage; MOS capacitors; Nanocrystals; Nonvolatile memory; Polymer films; Scalability; Self-assembly; Size control;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269340
