DocumentCode :
2590219
Title :
Program/erase dynamics and channel conduction in nanocrystal memories
Author :
Monzio Compagnoni, C. ; Ielmini, D. ; Spinelli, A.S. ; Lacaita, A.L. ; Gerardi, C. ; Perniola, L. ; De Salvo, B. ; Lombardo, S.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy
fYear :
2003
fDate :
8-10 Dec. 2003
Abstract :
We present new models for nanocrystal (NC) memories, addressing program/erase (P/E) transients and carrier conduction in the channel controlled by discrete nodes. The model allows for the calculation of the achievable threshold-voltage (V/sub T/) window and P/E times under uniform tunneling-injection conditions. Comparisons with experimental data are shown, demonstrating that our physically-based model correctly captures the VT dependence on critical cell and bias parameters. The model can be used to draw technological guidelines for window optimization in NC cells.
Keywords :
carrier mobility; circuit optimisation; integrated circuit modelling; integrated memory circuits; nanoelectronics; nanostructured materials; tunnelling; NC cells; bias parameters; carrier conduction; channel conduction; critical cell parameters; discrete node controlled channel; nanocrystal memories; nanocrystal memory model; physically-based model; program/erase dynamics; program/erase times; program/erase transients; technological guidelines; threshold-voltage window; uniform tunneling-injection conditions; window optimization; Capacitance; Electric variables measurement; Electron emission; Electrostatic measurements; Lead compounds; Nanocrystals; Seals; Steady-state; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
Type :
conf
DOI :
10.1109/IEDM.2003.1269342
Filename :
1269342
Link To Document :
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