12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET

Author

Ando, Y. ; Okamoto, Y. ; Hataya, K. ; Nakayama, T. ; Miyamoto, H. ; Inoue, T. ; Kuzuhara, M.

Author_Institution

c/o Photonic & Wireless Devices Res.Labs, NEC Corp., Otsu, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A recessed-gate structure was introduced to improve transconductance (gm) and gain characteristics in AlGaN/GaN field-plate (FP) FETs. A maximum gm was improved from 130 to 200 mS/mm by introducing gate recess. Recessed FP-FETs exhibited 3-7 dB higher linear gain as compared with planar FP-FETs. A 1 mm-wide recessed FP-FET biased at a drain voltage of 66 V demonstrated 12.0 W output power, 21.2 dB linear gain, and 48.8 % power added efficiency at 2 GHz. To our knowledge, the power density of 12.0 W/mm is the highest ever achieved for GaN-based FETs.

Keywords

III-V semiconductors; aluminium compounds; electrodes; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device metallisation; semiconductor heterojunctions; 1 mm; 12.0 W; 130 to 200 mS/mm; 2 GHz; 21.2 dB; 48.8 percent; 66 V; AlGaN-GaN; GaN-based FET; drain voltage; gain characteristics; gate recess; linear gain; output power; power added efficiency; power density; recessed-gate AlGaN/GaN heterojunction field-plate FET; recessed-gate structure; transconductance; Aluminum gallium nitride; Chemical vapor deposition; Etching; FETs; Gain; Gallium nitride; Heterojunctions; Passivation; Silicon compounds; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269345

Filename

1269345