Multifunction integration of junction-MOSFETs and nonvolatile FETs on a single 4H-SiC substrate for 300/spl deg/C operation

Author

Sang-Mo Koo ; Zetterling, C.-M. ; Ostling, M. ; Khartsev, S. ; Grishin, A.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Stockholm, Sweden

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A novel integration of junction-MOSFETs (JMOSFETs) and nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is presented. The SiC JMOSFET controls the drain current effectively from the buried junction gate, thereby allowing for a constant current level at elevated temperatures. The SiC NVFET has similar functions with nonvolatile memory capability due to its ferroelectric gate stack. This work is the first report on the integration of fully functional SiC JMOSFETs and NVFETs on the same substrate up to 300/spl deg/C.

Keywords

MOSFET; ferroelectric devices; ferroelectric storage; ferroelectric thin films; field effect integrated circuits; integrated circuit measurement; integrated circuit reliability; random-access storage; semiconductor materials; silicon compounds; 300 C; SiC; SiC JMOSFET; SiC NVFET; buried junction gate; constant current level; drain current; ferroelectric gate stack; high temperature operation; junction-MOSFET; multifunction integration; nonvolatile FET; nonvolatile memory capability; single 4H-SiC substrate; Dry etching; FETs; Fabrication; Ferroelectric materials; Nonvolatile memory; Silicon carbide; Stability; Substrates; Temperature control; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269348

Filename

1269348