Title :
A high power Tx/Rx switch IC using AlGaN/GaN HFETs
Author :
Ishida, H. ; Hirose, Y. ; Murata, T. ; Kanda, A. ; Ikeda, Y. ; Matsuno, T. ; Inoue, K. ; Uemoto, Y. ; Tanaka, T. ; Egawa, T. ; Ueda, D.
Author_Institution :
Semicond. Device Res. Center, Matsushita Electr. Ind. Co., Ltd., Kyoto, Japan
Abstract :
An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping techniques and a low off-state capacitance by using an Al/sub 2/O/sub 3/ substrate led to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43 W at 1 GHz.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; capacitance; doping profiles; electric resistance; gallium compounds; losses; mobile communication; power field effect transistors; power semiconductor switches; receivers; semiconductor doping; transmitters; 0.26 dB; 1 GHz; 43 W; Al/sub 2/O/sub 3/ substrate; AlGaN-GaN; AlGaN/GaN HFET; Si doping technique; high power Tx/Rx switch IC; insertion loss; isolation performance; mobile communication systems; off-state capacitance; on-state resistance; power handling capability; Aluminum gallium nitride; Capacitance; Communication switching; FETs; Gallium nitride; HEMTs; Insertion loss; MODFETs; Switches; Switching circuits;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269350
