Design of Highly Linear, 1GHz 8-bit Digitally Controlled Ring Oscillator with Wide Tuning Range in 0.18um CMOS Process

Author

Pokharel, R.K. ; Tomar, A. ; Kanaya, H. ; Yoshida, K.

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka

fYear

2008

fDate

10-12 Sept. 2008

Firstpage

623

Lastpage

626

Abstract

This paper presents a simple architecture for 8-bit digital controlled oscillator (DCO) on 3-stages ring topology in TSMC 0.18 um CMOS technology. A new schematic of tristate inverter is also proposed. The proposed tristate inverter has higher switching speed and low power consumption as compared to conventional one. The control digit changes the driving current that provides large tuning range from 316 MHz to 1165 MHz with very good linearity. The output voltage swing is always greater than 1.6 V while the supply voltage is 1.8 V. The proposed DCO has simulated phase noise of -114 dBc/Hz @1 MHz and 23.2 mW power consumption at 1.0 GHz central frequency.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; circuit tuning; integrated circuit design; integrated circuit noise; invertors; phase noise; DCO; TSMC CMOS technology; digitally controlled ring oscillator; frequency 316 MHz to 1165 MHz; highly linear oscillator; phase noise; power 23.2 mW; size 0.18 mum; three-stage ring topology; tristate inverter; voltage 1.8 V; CMOS process; CMOS technology; Digital control; Digital-controlled oscillators; Energy consumption; Inverters; Ring oscillators; Topology; Tuning; Voltage; DCO; inverter; linearity; phase noise; power consumption; ring oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008 China-Japan Joint

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3821-1

Type

conf

DOI

10.1109/CJMW.2008.4772508

Filename

4772508