Title :
High Linearity 5.2 GHz Power Amplifier MMIC Using the Linearizer Circuit
Author :
Wu, ChiaSong ; Chang, ChienHuang ; Liu, HsingChung ; Ko, TingYu ; Chiu, HsienChin
Author_Institution :
Dept. of Electron. Eng., Vanung Univ., Chungli
Abstract :
This paper aimed to study the linearity in the 5.2 GHz power amplifier microwave monolithic integrated circuit (MMIC), which was performed with a 0.15 mum AlGaAs/InGaAs D-mode pHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW). Based on those technologies, the power amplifier obtained the output power of 13.3 dBm and the power gain of more than 15 dB. The input third-order intercept point (IIP3) of 1.4 dBm and the output third-order intercept point (OIP3) of 22.5 dBm and power added efficiency (PAE) of 21% were attained, respectively. Finally, the overall power characterization exhibited high gain and linearity, which illustrated that power amplifier had the circuit compact size and exhibited favorable RF characteristics.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; coplanar waveguides; gallium arsenide; indium compounds; integrated circuit design; AlGaAs-InGaAs; D-mode pHEMT technology; RF characteristics; coplanar waveguide; frequency 5.2 GHz; input third-order intercept point; linearizer circuit; microwave monolithic integrated circuit; output third-order intercept point; power added efficiency; power amplifier MMIC; size 0.15 mum; Coplanar waveguides; High power amplifiers; Indium gallium arsenide; Integrated circuit technology; Linearity; MMICs; Microwave amplifiers; Monolithic integrated circuits; PHEMTs; Power amplifiers; CPW; MMIC; Power amplifier; linearizer;
Conference_Titel :
Microwave Conference, 2008 China-Japan Joint
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3821-1
DOI :
10.1109/CJMW.2008.4772510
