FinFET SONOS flash memory for embedded applications

Author

Peiqi Xuan ; Min She ; Harteneck, B. ; Liddle, A. ; Bokor, J. ; King, T.-J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.

Keywords

MOS memory circuits; MOSFET; dielectric thin films; flash memories; integrated circuit design; integrated circuit measurement; integrated circuit reliability; silicon-on-insulator; 40 nm; FD-SOI FinFET SONOS flash memory devices; FinFET SONOS flash memory; Si; Si-SiO/sub 2/; Si[100] surfaces; Si[110] surfaces; body contact; embedded applications; memory endurance; memory reading disturbance; memory retention time; program/erase characteristics; scalable gate length; silicon surfaces; CMOS technology; Electrons; Fabrication; FinFETs; Flash memory; Optical devices; SONOS devices; Silicon on insulator technology; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269355

Filename

1269355