Title :
A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories
Author :
Chang Hyun Lee ; Kyung In Choi ; Myoung Kwan Cho ; Yun Heub Song ; Kyu Charn Park ; Kinam Kim
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea
Abstract :
A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ (SANOS) with TaN metal gate is for the first time proposed for the next generation non-volatile memory technology. When TaN metal gate is applied for the SANOS instead of commonly used n+ poly-Si, the unwanted backward Fowler-Nordheim tunneling current of electrons through the top oxide is significantly suppressed owing to its higher work function and better compatibility with high k dielectrics. As a result, the program/erase speed is significantly improved and the saturation level of erase V/sub TH/ can be obtained to be a negative voltage of -3.5V.
Keywords :
alumina; dielectric thin films; flash memories; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated memory circuits; permittivity; silicon compounds; tantalum compounds; work function; -3.5 V; SANOS structure; SiO/sub 2/-SiN-Al/sub 2/O/sub 3/; SiO/sub 2//SiN/Al/sub 2/O/sub 3/ SONOS structure; TaN; TaN metal gate; backward Fowler-Nordheim tunneling current; erase threshold voltage saturation level; high k dielectrics; multi-gigs bit flash memories; nonvolatile memory technology; program/erase speed; top oxide; work function; Electrons; High K dielectric materials; High-K gate dielectrics; Research and development; SONOS devices; Silicon compounds; Thermal resistance; Tunneling; Virtual manufacturing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269356
