Title :
Multilevel phase change memory cell model
Author :
El-Hassan, Nemat H. ; Kumar, T. Nandha ; Almurib, Haider Abbas F.
Author_Institution :
Fac. of Eng., Univ. of Nottingham, Semenyih, Malaysia
Abstract :
This paper presents a Multilevel Phase Change Memory (MLPCM) cell model, the suggested model is MATLAB based and can accurately simulate the behavior of the cell in response to the programming input. The model calculates the resistance of the cell as a function of the crystalline fraction resulting from the temperature generated by the programming current; multiple resistance levels are achieved by controlling the programming pulse width. And the drift behaviour of amorphous and intermediate resistance levels is precisely evaluated by including the variance of the drift exponent as a function of resistance levels to the model.
Keywords :
integrated circuit modelling; phase change memories; MATLAB; MLPCM cell model; amorphous resistance level; cell resistance; crystalline fraction; drift behaviour; drift exponent variance; intermediate resistance level; multilevel phase change memory cell model; multiple-resistance level; programming current; programming input; programming pulse width; Integrated circuit modeling; Mathematical model; Phase change materials; Phase change memory; Programming; Resistance; Threshold voltage; Joule heat; Multilevel; chalcogenide; drift behaviour; non-volatile memory;
Conference_Titel :
Circuits and Systems (APCCAS), 2014 IEEE Asia Pacific Conference on
Conference_Location :
Ishigaki
DOI :
10.1109/APCCAS.2014.7032822
