Title :
A 20 GHz power detector with 176 mV/dB conversion gain
Author :
Chua-Chin Wangt ; Deng-Shian Wang ; Shiou-Ya Chen ; Chia-Ming Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
This paper introduces a high frequency power detector with high conversion gain for frequency-shift applications. The proposed design comprises an amplitude-to-voltage converter (AVC), a peak detector, and a bandgap. To increase the operating frequency range, AVC utilizes the half of an RMS power detector to attain the power measure of an input signal. Since the input power is converted to a DC voltage by AVC, the peak detector will secure the resonant frequency when AVC generates the highest voltage. The proposed power detector circuit is realized on silicon using a 60 V 0.25 μm CMOS technology. The post-layout simulation result shows that the proposed circuit is able to detect input frequency from 500 Hz to 20 GHz, and the conversion gain of AVC is 176 mV/dB, while the power consumption is 20 mW given a 5 V power supply voltage.
Keywords :
CMOS integrated circuits; peak detectors; AVC; CMOS technology; DC voltage; RMS power detector; amplitude-to-voltage converter; bandgap; frequency 500 Hz to 20 GHz; frequency-shift applications; high frequency power detector; peak detector; post-layout simulation result; power 20 mW; resonant frequency; size 0.25 mum; voltage 5 V; voltage 60 V; Automatic voltage control; CMOS integrated circuits; Detectors; Frequency conversion; Gain; Resonant frequency; Analog processing circuit; frequency-shift readout circuit; peak detector; power detector; resonant frequency;
Conference_Titel :
Circuits and Systems (APCCAS), 2014 IEEE Asia Pacific Conference on
Conference_Location :
Ishigaki
DOI :
10.1109/APCCAS.2014.7032841