Title :
The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips
Author :
Tang, D.D. ; Lin, W.C. ; Lai, L.S. ; Wang, C.H. ; Lee, L.P. ; Hsu, H.M. ; Wu, C.M. ; Chang, C.W. ; Lien, W.Y. ; Chao, C.P. ; Lee, C.Y. ; Chern, G.J. ; Guo, J.C. ; Chang, C.S. ; Sun, Y.C. ; Du, D.S. ; Lan, K.C. ; Lin, L.F.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
Proton bombardment technology is integrated into the standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10/sup 15/ cm/sup -2/, 100 /spl mu/m deep bombardment through mask windows, /spl rho//sub s/=20k/spl sim/50k /spl Omega/.cm regions are formed, which are thermally stable at 200/spl deg/C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.
Keywords :
MOSFET; inductors; ion implantation; mixed analogue-digital integrated circuits; proton effects; protons; radiofrequency integrated circuits; thermal stability; 100 micron; 200 degC; H; MOSFET; RFIC; bombardment depth; high-Q inductors; local semi-insulating regions; mask windows; mixed-signal IC; post-backend process module; proton bombardment process; thermally stable regions; Annealing; Circuits; Coils; Conductivity; Inductors; Manufacturing processes; Protons; Radio frequency; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269370
