3-D Monte Carlo simulations of FinFETs

Author

Kathawala, G.A. ; Ravaioli, U.

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A new 3D Monte Carlo simulator has been developed to simulate ultra-small semiconductor devices. Quantum corrections are introduced by self-consistently coupling a 2D Schrodinger solver with the 3D simulator. Results obtained from the simulation of FinFET devices using this simulator indicate that the charge density at the corners of these devices is reduced greatly by quantization effects. The line charge density changes only slightly under quantum corrections. The effects of fin-extension length on the device behavior of FinFETs are also presented.

Keywords

MOSFET; Monte Carlo methods; Schrodinger equation; quantisation (quantum theory); semiconductor device models; 2D Schrodinger solver; 3D Monte Carlo simulation; 3D Monte Carlo simulator; FinFET; charge transport; device corner charge density; fin-extension length; line charge density; quantization effects; quantum corrections; ultra-small semiconductor devices; Analytical models; Carrier confinement; FinFETs; Flowcharts; MOSFETs; Monte Carlo methods; Particle scattering; Quantization; Semiconductor devices; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269372

Filename

1269372