Title :
A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET
Author :
Krishnamohan, T. ; Jungemann, C. ; Saraswat, K.C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
A novel, high performance sub-20 nm DMDG Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET is proposed. Full-band Monte Carlo and 1D Poisson-Schrodinger simulations show a 43% increase in I/sub on/ and /spl sim/2/spl times/ increase in switching speeds at 35% lower power dissipation compared to conventional Si DGFETs. The cut-off frequencies are in excess of 1000 GHz making the device also very suitable for analog applications.
Keywords :
Ge-Si alloys; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; submillimetre wave transistors; 1000 GHz; 1D Poisson-Schrodinger simulation; 20 nm; DMDG PMOSFET; Si-SiGe; analog applications; cut-off frequencies; depletion-mode double-gate PMOSFET; full-band Monte Carlo simulation; switching speed; Carrier confinement; Degradation; Delta modulation; Electrostatics; FETs; MOSFET circuits; Monte Carlo methods; Power dissipation; Scattering; Silicon;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269373
