A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET

Author

Krishnamohan, T. ; Jungemann, C. ; Saraswat, K.C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A novel, high performance sub-20 nm DMDG Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET is proposed. Full-band Monte Carlo and 1D Poisson-Schrodinger simulations show a 43% increase in I/sub on/ and /spl sim/2/spl times/ increase in switching speeds at 35% lower power dissipation compared to conventional Si DGFETs. The cut-off frequencies are in excess of 1000 GHz making the device also very suitable for analog applications.

Keywords

Ge-Si alloys; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; submillimetre wave transistors; 1000 GHz; 1D Poisson-Schrodinger simulation; 20 nm; DMDG PMOSFET; Si-SiGe; analog applications; cut-off frequencies; depletion-mode double-gate PMOSFET; full-band Monte Carlo simulation; switching speed; Carrier confinement; Degradation; Delta modulation; Electrostatics; FETs; MOSFET circuits; Monte Carlo methods; Power dissipation; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269373

Filename

1269373