Investigation of performance limits of germanium double-gated MOSFETs

Author

Low, T. ; Hou, Y.T. ; Li, M.F. ; Chunxiang Zhu ; Chin, A. ; Samudra, G. ; Chan, Louiza ; Kwong, D.-L.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

8-10 Dec. 2003

Abstract

The performance limits and engineering issues of ultra-thin body (UTB) double gated (DG) Ge channel n-MOSFETs are examined in this paper. The non-equilibrium Green´s Function (NEGF) approach, including both L and /spl Delta/ conduction valleys, is employed for source to drain current, while the improved WKB tunneling is employed for substrate to drain (band-to-band BTB) and gate to channel current. All possible Ge surfaces and channel orientations are explored. Our results conclude that in addition to lower power supply voltage advantages, the engineered Ge<110> devices with suppressed BTB and gate leakages can achieve better intrinsic delay to OFF power ratio than Si<100> devices.

Keywords

Green´s function methods; MOSFET; WKB calculations; elemental semiconductors; germanium; leakage currents; semiconductor device models; tunnelling; BTB suppression; Ge; Ge channel n-MOSFET; Ge channel orientations; Ge surfaces; MOSFET performance limits; NEGF; UTB; WKB tunneling; conduction valleys; delay to OFF power ratio; double-gated MOSFET; drive current; gate leakage; gate/channel current; nonequilibrium Green´s function; source/drain current; standby current; substrate/drain current; ultra-thin body n-MOSFET; Doping; Electrons; Germanium; Low voltage; MOSFETs; Manufacturing; Microelectronics; Quantization; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269374

Filename

1269374