Title :
Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFETs
Author :
Tokunaga, K. ; Sturm, J.C. ; Colinge, J.P.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
Summary form only given. Anomalously sharp subthreshold slopes in fully depleted ultrathin SOI MOSFETs are discussed. The effect can be eliminated by control of the lower SOI interface charge condition. The temperature dependence of this effect is also discussed
Keywords :
insulated gate field effect transistors; interface electron states; semiconductor-insulator boundaries; thin film transistors; SOI interface charge condition; anomalous subthreshold slopes; fully depleted ultrathin SOI MOSFETs; substrate bias; temperature dependence; Capacitance measurement; FETs; Impedance; Leakage current; MOSFET circuits; Parasitic capacitance; Substrates; Temperature dependence; Very large scale integration; Voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69743
