• DocumentCode
    2590863
  • Title

    Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFETs

  • Author

    Tokunaga, K. ; Sturm, J.C. ; Colinge, J.P.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • fYear
    1989
  • fDate
    3-5 Oct 1989
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    Summary form only given. Anomalously sharp subthreshold slopes in fully depleted ultrathin SOI MOSFETs are discussed. The effect can be eliminated by control of the lower SOI interface charge condition. The temperature dependence of this effect is also discussed
  • Keywords
    insulated gate field effect transistors; interface electron states; semiconductor-insulator boundaries; thin film transistors; SOI interface charge condition; anomalous subthreshold slopes; fully depleted ultrathin SOI MOSFETs; substrate bias; temperature dependence; Capacitance measurement; FETs; Impedance; Leakage current; MOSFET circuits; Parasitic capacitance; Substrates; Temperature dependence; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1989., 1989 IEEE
  • Conference_Location
    Stateline, NV
  • Type

    conf

  • DOI
    10.1109/SOI.1989.69743
  • Filename
    69743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2590863