Scaling analysis of phase-change memory technology

Author

Pirovano, A. ; Lacaita, A.L. ; Benvenuti, A. ; Pellizzer, F. ; Hudgens, S. ; Bez, R.

Author_Institution

Politecnico di Milano, Italy

fYear

2003

fDate

8-10 Dec. 2003

Abstract

The scaling capability of chalcogenide-based phase-change memory (PCM) is discussed. Experimental and numerical results are presented, showing that the reset current scales down with the device contact area, reaching values as low as 50 /spl mu/A. The impact of thermal cross-talk between adjacent bits is investigated, showing that thermal disturbs will not limit the scaling of PCM down to the 65 nm technology node. Finally, scaling rules for the PCM technology are provided.

Keywords

antimony compounds; germanium compounds; order-disorder transformations; random-access storage; semiconductor device models; 50 muA; 65 nm; Ge/sub 2/Sb/sub 2/Te/sub 5/; OUM; PCM scaling analysis; adjacent bit thermal cross-talk; chalcogenide-based phase-change memory; device contact area; nonvolatile semiconductor technology; ovonic unified memory; reset current scaling; thermal disturbs; Amorphous materials; Crystalline materials; Crystallization; Electric variables; Nonvolatile memory; Phase change materials; Phase change memory; Semiconductor materials; Switches; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269376

Filename

1269376