Title :
SETMOS: a novel true hybrid SET-CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs
Author :
Mahapatra, Santanu ; Pott, V. ; Ecoffey, S. ; Schmid, A. ; Wasshuber, C. ; Tringe, J.W. ; Leblebici, Yusuf ; Declercq, M. ; Banerjee, K. ; Ionescu, A.M.
Author_Institution :
Inst. of Microelectron. & Microsystems, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
We have proposed and validated a true hybrid SET/CMOS device, called SETMOS, that is able to extend the Coulomb blockade oscillations of a SET transistor into the /spl mu/A current range, corresponding to near sub-threshold operation region of a nanometer-scale MOSFET. New nano-scale analog applications, working at sub-ambient temperatures (-150/spl deg/C up to 100/spl deg/C), including a novel NDR circuit, amplifiers, and even NEMS-SETMOS circuit cells are uniquely supported by SETMOS.
Keywords :
CMOS analogue integrated circuits; Coulomb blockade; MOSFET; amplifiers; nanoelectronics; negative resistance circuits; single electron transistors; -150 to 100 degC; 1 to 2 nm; 65 nm; NDR circuit; NEMS-SETMOS circuit cells; SET transistor; SETMOS; amplifiers; high current Coulomb blockade oscillation cell; hybrid SET-CMOS oscillation cell; nanometer-scale MOSFET; nanoscale analog IC; sub-ambient temperature operation; sub-threshold operation region; Capacitance; Character generation; Integrated circuit interconnections; MOSFET circuits; Power MOSFET; Power dissipation; Resistors; Semiconductor device modeling; Temperature sensors; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269377
