DocumentCode
2590922
Title
Super-scaled InP HBTs for 150 GHz circuits
Author
Zolper, J.C.
Author_Institution
DARPA/MTO, Arlington, VA, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
The development of InP heterojunction bipolar transistors (HBTs) with the emitter feature size less than 0.25 /spl mu/m is described. The key technical challenges in scaling to this dimension are reviewed and the technology approaches are enumerated. The development of these super-scaled InP HBTs is expected to enable mixed signal circuits with clock speeds in excess of 100 GHz.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; 0.25 micron; 150 GHz; HBT scaling; InP; emitter feature size; heterojunction bipolar transistors; mixed signal circuits; super-scaled HBT; Bipolar transistors; CMOS technology; Capacitance; Circuits; Clocks; Contact resistance; Current density; Frequency; Heterojunction bipolar transistors; Indium phosphide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269378
Filename
1269378
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