Title :
Super-scaled InP HBTs for 150 GHz circuits
Author_Institution :
DARPA/MTO, Arlington, VA, USA
Abstract :
The development of InP heterojunction bipolar transistors (HBTs) with the emitter feature size less than 0.25 /spl mu/m is described. The key technical challenges in scaling to this dimension are reviewed and the technology approaches are enumerated. The development of these super-scaled InP HBTs is expected to enable mixed signal circuits with clock speeds in excess of 100 GHz.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave integrated circuits; mixed analogue-digital integrated circuits; 0.25 micron; 150 GHz; HBT scaling; InP; emitter feature size; heterojunction bipolar transistors; mixed signal circuits; super-scaled HBT; Bipolar transistors; CMOS technology; Capacitance; Circuits; Clocks; Contact resistance; Current density; Frequency; Heterojunction bipolar transistors; Indium phosphide;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269378
