Title :
Fully integrated 50 Gbit/s half-rate linear phase detector in SiGe BiCMOS
Author :
Joram, Niko ; Barghouthi, A. ; Knochenhauer, C. ; Ellinger, F. ; Scheytt, C.
Author_Institution :
Dresden University of Technology, Germany
Abstract :
Summary form only given, as follows. Presented is a fully integrated half-rate linear phase detector for clock and data recovery (CDR) in serial communication systems which is capable of operating up to 50 Gbit/s. Because of its half-rate architecture, the phase detector features inherent 1:2 demultiplexing. At a core supply voltage of 3.3 V and a bias voltage of 3.6 V, the total power consumption of the integrated circuit amounts to 1.22 W. Using a 0.25 µm SiGe HBT BiCMOS process, the chip core area occupies 0.88mm2.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973130