High frequency InAs-channel HEMTs for low power ICs

Author

Royter, Y. ; Elliott, K.R. ; Deelman, P.W. ; Rajavel, R.D. ; Chow, D.H. ; Milosavljevic, I. ; Fields, C.H.

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

InAs-channel HEMTs with improved breakdown characteristics were realized by using AlInAs barriers for enhanced hole confinement. A performance of f/sub t/>300 GHz at V/sub ds/ = 0.7 V has been achieved for depletion mode devices. As an important step towards enhancement mode operation, we fabricated devices with charge compensation by p-type doping. Devices with V,= -0.35 V and f/sub t/= 20 GHz were realized. These results, in conjunction with the sub-micron device development, show promise for a low-power highspeed IC technology.

Keywords

III-V semiconductors; aluminium compounds; doping profiles; high electron mobility transistors; high-speed integrated circuits; indium compounds; low-power electronics; millimetre wave field effect transistors; -0.35 V; 0.7 V; 20 GHz; 300 GHz; AlInAs barriers; HEMT breakdown; InAs-AlInAs; InAs-channel HEMT; charge compensation; depletion mode devices; enhanced hole confinement; enhancement mode operation; high frequency HEMT; high-speed IC technology; low power IC; p-type doping; Doping; Electric breakdown; Electron mobility; Frequency; HEMTs; High speed integrated circuits; Lattices; MODFETs; Microwave FET integrated circuits; Power integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269385

Filename

1269385