Vertical multi-RESURF MOSFETs exhibiting record low specific resistance

Author

van Dalen, R. ; Rochefort, C.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2003

fDate

8-10 Dec. 2003

Abstract

For the first time, experimental results are presented of vertical RESURF MOSFETs in which the alternating pn-junctions in the drift region are formed by a combination of a trench etch and vapor phase doping (VPD) process. Such a process allows very small pitch sizes, offering unprecedentedly low specific resistance. A reverse breakdown voltage of 165 V is obtained for devices with a 10 /spl mu/m drift region doped at 5/spl times/10/sup 15/ cm/sup -3/, with a corresponding specific resistance of 208 m/spl Omega//spl middot/mm/sup 2/ (V/sub g/=10 V). These are the first MOSFETs to break the 1D silicon limit below 200 V, with a specific resistance 30% below current state-of-the-art devices.

Keywords

isolation technology; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor doping; 10 V; 10 micron; 165 V; VPD process; drift region alternating pn-junctions; low specific resistance; power MOSFET; reverse breakdown voltage; trench etch; vapor phase doping; vertical multi-RESURF MOSFET; Boron; Doping; Electric variables; Etching; Filling; MOSFETs; Manufacturing processes; Metallization; Numerical simulation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269386

Filename

1269386