Title :
Electronically tuned UHF power amplifier
Author_Institution :
Green Mountain Radio Research Company, Colchester, United States
Abstract :
Summary form only given, as follows. This electronically tunable UHF power amplifier (PA) is based upon a Gallium-Nitride (GaN) HEMT operated in class C. The gate input is tuned by two arrays of varactor diodes. The drain output is tuned by a three-stub tuner whose stub lengths are controlled by pin diodes. From 325 to 800 MHz (factor of 2.5∶1), the PA delivers an output of 34 to 50 W with an overall efficiency of 47 to 65 percent.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973144
