• DocumentCode
    2591194
  • Title

    Electronically tuned UHF power amplifier

  • Author

    Raab, F.H.

  • Author_Institution
    Green Mountain Radio Research Company, Colchester, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. This electronically tunable UHF power amplifier (PA) is based upon a Gallium-Nitride (GaN) HEMT operated in class C. The gate input is tuned by two arrays of varactor diodes. The drain output is tuned by a three-stub tuner whose stub lengths are controlled by pin diodes. From 325 to 800 MHz (factor of 2.5∶1), the PA delivers an output of 34 to 50 W with an overall efficiency of 47 to 65 percent.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973144
  • Filename
    5973144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2591194