Title :
Study of electrical properties of Al/SrTiO3/n-Si interfaces using capacitance measurements
Author :
Tahir-ul-Islam ; Ali, Adnan ; Arshad, M.Imran ; Asghar, M. ; Mahmood, A. ; Muret, P.
Author_Institution :
Dept. of Phys., Islamia Univ. of Bahawalpur, Bahawalpur
Abstract :
Electrical properties of Al/SrTiO3 /n-Si, metal-insulator-semiconductor (MIS) structure have been carried out by employing capacitance measurements. Thin films of SrTiO3 having thicknesses 50, 30 and 15 nm were grown on n-Si (ND= (2-10) times 1015 cm-3) by metal organo-chemical vapor deposition (MOCVD). Effective dielectric constant (k) of SrTiO3 was found to be much lesser than the theoretical value (~300) and fluctuated with layer thickness in the range of 95 to 32. The observed decrease in dielectric constant has been explained on the basis of two layer model. Annealing under specific ambient has improved the dielectric properties of the samples. This paper contributes as the enabling technologies in the area of optoelectronic components fabrication for communications.
Keywords :
MIS structures; MOCVD; aluminium; annealing; elemental semiconductors; permittivity; silicon; strontium compounds; Al-SrTiO3-Si; annealing; capacitance; dielectric constant; electrical properties; metal-insulator-semiconductor structure; organo-chemical vapor deposition; thin films; Annealing; Capacitance measurement; Chemical vapor deposition; Dielectric constant; Dielectric materials; High-K gate dielectrics; Hydrogen; MOCVD; Metal-insulator structures; Random access memory; MIS; SrTiO3; capacitance measurements; dielectric constant;
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies, 2007. HONET 2007. International Symposium on
Conference_Location :
Dubai
Print_ISBN :
978-1-4244-1828-2
Electronic_ISBN :
978-1-4244-1829-9
DOI :
10.1109/HONET.2007.4600279
