DocumentCode
2591226
Title
Device physics at the scaling limit: what matters? [MOSFETs]
Author
Lundstrom, M.
Author_Institution
Purdue Univ., West Lafayette, IN, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
This paper reviews our efforts to use theory and simulation to understand the device physics of nanoscale MOSFETs. The essential physics of MOSFETs at the scaling limit are discussed, and unresolved theoretical issues and technological ones that limit device performance and ultimate scaling are identified.
Keywords
MOSFET; ballistic transport; nanoelectronics; quantum theory; scattering; semiconductor device models; ballistic MOSFET; device performance limitations; nanoscale MOSFET; quantum mechanical effects; scaling limit device physics; scattering; CMOS technology; Computational modeling; MOSFETs; Nanoscale devices; Physics; Predictive models; Quantum capacitance; Quantum computing; Quantum mechanics; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269398
Filename
1269398
Link To Document