DocumentCode
2591244
Title
Inversion channel mobility in high-/spl kappa/ high performance MOSFETs
Author
Ren, Z. ; Fischetti, M.V. ; Gusev, E.P. ; Cartier, E.A. ; Chudzik, M.
Author_Institution
Microelectron. Div., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
For the first time, we present compelling theoretical and experimental evidence that the inversion channel mobility in HfO/sub 2//SiO(N)/Si is significantly reduced by soft-phonon scattering. This scattering mechanism - associated with the high-/spl kappa/ material itself - poses an intrinsic limit to the mobility that can not be countered by process optimization.
Keywords
MOSFET; carrier mobility; dielectric thin films; elemental semiconductors; hafnium compounds; phonons; scattering; silicon; silicon compounds; HfO/sub 2/-SiO-Si; HfO/sub 2/-SiON-Si; carrier mobility; high performance MOSFET; high-k insulating stacks; inversion channel mobility; process optimization; soft-phonon scattering mechanism; Dielectric substrates; Electron mobility; High K dielectric materials; High-K gate dielectrics; MOSFETs; Optical scattering; Phonons; Rough surfaces; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269399
Filename
1269399
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