Title :
Impact ionization in strained-Si/SiGe heterostructures
Author :
Waldron, N.S. ; Pitera, A.J. ; Lee, M.L. ; Fitzgerald, E.A. ; del Alamo, J.A.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
We have experimentally studied impact ionization (II) in a strained-Si/SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly higher levels of II when compared with reference Si devices operating under identical conditions.
Keywords :
Ge-Si alloys; elemental semiconductors; impact ionisation; semiconductor heterojunctions; semiconductor materials; silicon; Si-SiGe; impact ionization positive temperature coefficient; self-heating; strained-Si technology; strained-Si/SiGe heterostructures; Buffer layers; CMOS technology; Germanium silicon alloys; Impact ionization; Radio frequency; Resistors; Rough surfaces; Silicon germanium; Testing; Thermal conductivity;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269404
