DocumentCode :
2591551
Title :
Reemergence of the surface-potential-based compact MOSFET models
Author :
Gildenblat, G. ; Cai, X. ; Chen, T.-L. ; Gu, X. ; Wang, H.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fYear :
2003
fDate :
8-10 Dec. 2003
Abstract :
This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.
Keywords :
MOSFET; linearisation techniques; semiconductor device models; surface potential; MOSFET modeling; streamlined surface potential approximation; surface-potential-based compact MOSFET model; symmetric linearization method; Equations; Harmonic distortion; MOSFET circuits; Physics; Power MOSFET; Power supplies; Radio frequency; Tunneling; Varactors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
Type :
conf
DOI :
10.1109/IEDM.2003.1269415
Filename :
1269415
Link To Document :
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