Title :
Voltage and temperature dependence of capacitance of high-k HfO/sub 2/ MIM capacitors: a unified understanding and prediction
Author :
Chunxiang Zhu ; Hang Hu ; Xiongfei Yu ; Kim, S.J. ; Chin, A. ; Li, M.F. ; Byung Jin Cho ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
High-k MIM capacitors like HfO/sub 2/ are of great interest for Si analog and RF applications recently. This work is intended to explain the dependences of VCC on dielectric thickness and frequency as well as the temperature dependence of capacitance of HfO/sub 2/ MIM capacitors. Based on a free carrier injection model, a unified understanding is achieved for the first time: (1) the thickness (t) dependence of VCC (/spl alpha/), which exhibits a relation of /spl alpha//spl prop/t/sup -n/, is an intrinsic property due to E-field polarization; (2) the frequency dependence of VCC, the stress induced VCC, and temperature dependences of capacitance are all due to change of relaxation time with different carrier mobility in the insulator. This model is also applied to predict the VCC for future applications.
Keywords :
MIM devices; capacitance; carrier mobility; carrier relaxation time; dielectric thin films; thin film capacitors; E-field polarization; HfO/sub 2/; VCC dependences; capacitance temperature dependence; capacitance voltage dependence; dielectric thickness; free carrier injection model; high-k MIM capacitors; insulator carrier mobility; relaxation time; stress induced VCC; Capacitance; Frequency dependence; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Polarization; Radio frequency; Temperature dependence; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269419
