Impact of process characteristics on submicron defect effects

Author

Smith, Bruce W. ; Hirschman, Karl

Author_Institution

Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA

fYear

1990

fDate

11-12 Sep 1990

Firstpage

63

Lastpage

67

Abstract

The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 μm, located from 0 to 5 μm from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling

Keywords

integrated circuit technology; lithography; masks; scanning electron microscope examination of materials; semiconductor technology; 0.6 to 2 micron; Al; Si; Si₃N₄; SiO₂; image intensities; lithography; polysilicon; process characteristics; resist materials; scanning electron microscopy; semiconductor processing; submicron defect effects; submicron mask defect printability; two-dimensional modeling; Geometrical optics; Geometry; Lenses; Lithography; Optical devices; Production; Random access memory; Resists; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990

Conference_Location

Danvers, MA

Type

conf

DOI

10.1109/ASMC.1990.111220

Filename

111220