Title :
Impact of process characteristics on submicron defect effects
Author :
Smith, Bruce W. ; Hirschman, Karl
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 μm, located from 0 to 5 μm from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling
Keywords :
integrated circuit technology; lithography; masks; scanning electron microscope examination of materials; semiconductor technology; 0.6 to 2 micron; Al; Si; Si3N4; SiO2; image intensities; lithography; polysilicon; process characteristics; resist materials; scanning electron microscopy; semiconductor processing; submicron defect effects; submicron mask defect printability; two-dimensional modeling; Geometrical optics; Geometry; Lenses; Lithography; Optical devices; Production; Random access memory; Resists; Semiconductor process modeling; Silicon;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990
Conference_Location :
Danvers, MA
DOI :
10.1109/ASMC.1990.111220
