Writing current reduction for high-density phase-change RAM

Author

Hwang, Y.N. ; Lee, S.H. ; Ahn, S.J. ; Lee, S.Y. ; Ryoo, K.C. ; Hong, H.S. ; Koo, H.C. ; Yeung, F. ; Oh, J.H. ; Kim, H.J. ; Jeong, W.C. ; Park, J.H. ; Horii, H. ; Ha, Y.H. ; Yi, J.H. ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Kinam Kim

Author_Institution

Adv. Technol. Dev., Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea

fYear

2003

fDate

8-10 Dec. 2003

Abstract

By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors as a function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7 mA.

Keywords

order-disorder transformations; random-access storage; 0.7 mA; Ge/sub 2/Sb/sub 2/Te/sub 5/; RAM writing current reduction; cell size; cell thickness; chalcogenide memory element; contact size; doping concentration; high-density phase-change RAM; nonvolatile memories; phase transition; phase-change random access memory; Doping; Electrical resistance measurement; Electrodes; Fabrication; Phase change random access memory; Power system dynamics; Process control; Size control; Thickness control; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269422

Filename

1269422