Title :
Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes
Author :
Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, Gilles
Author_Institution :
Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d´ASCQ cedex, France
Abstract :
Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973171