DocumentCode :
2591690
Title :
Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes
Author :
Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, Gilles
Author_Institution :
Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d´ASCQ cedex, France
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given, as follows. We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5973171
Filename :
5973171
Link To Document :
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