DocumentCode
2591934
Title
In-line process monitoring using surface charge analysis
Author
Resnick, Allan ; Kamieniecki, Emil ; Phelps, Hal ; Jackson, Daniel
Author_Institution
SemiTest Inc., Billerica, MA, USA
fYear
1990
fDate
11-12 Sep 1990
Firstpage
117
Lastpage
120
Abstract
The effect of pull temperature on oxide charge and interface trap density is explored using surface charge analysis (SCA). With this technique, lower pull temperatures were found to result in lower oxide charge and interface trap density levels. The impact of pull temperature on these parameters was found to exist even after a number of additional processing steps. SCA was used to evaluate the individual charge contribution of each step within a process sequence
Keywords
electron traps; monitoring; process control; semiconductor technology; interface trap density; oxide charge; process sequence; processing steps; pull temperature; surface charge analysis; Capacitance-voltage characteristics; Charge measurement; Cleaning; Current measurement; Electric variables measurement; Monitoring; Pollution measurement; Production; Semiconductor device doping; Surface contamination;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990
Conference_Location
Danvers, MA
Type
conf
DOI
10.1109/ASMC.1990.111234
Filename
111234
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