DocumentCode
2592085
Title
High performance GaN HEMTs at 40 GHz with power density of 2.8W/mm
Author
Boutros, K. ; Regan, M. ; Rowell, P. ; Gotthold, D. ; Birkhahn, R. ; Brar, B.
Author_Institution
Rockwell Sci. Co., Thousand Oaks, CA, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
In this article we report record power densities in GaN HEMTs operating at 40 GHz. Devices fabricated with 0.18 /spl mu/m long e-beam gates showed a power density of 2.82 W/mm and a gain of 5.8 dB at 40 GHz. This record performance was obtained due to a combination of a high power gain, negligible RF dispersion, and a high breakdown voltage.
Keywords
III-V semiconductors; electron beam lithography; gallium compounds; high electron mobility transistors; isolation technology; millimetre wave field effect transistors; passivation; semiconductor device breakdown; wide band gap semiconductors; 40 GHz; 5.8 dB; GaN; MOCVD; electron-beam gates; epitaxial layers; high breakdown voltage; high performance HEMT; high power gain; implant isolation; passivation layer; power densities; two level interconnect; Contact resistance; Gallium nitride; HEMTs; High power amplifiers; III-V semiconductor materials; MODFETs; Performance gain; Pulse measurements; Radio frequency; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269443
Filename
1269443
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