Flexible threshold voltage FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel

Author

Liu, Y.X. ; Masahara, M. ; Ishii, K. ; Tsutsumi, T. ; Sekigawa, T. ; Takashima, H. ; Yamauchi, H. ; Suzuki, E.

Author_Institution

Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

The FT-FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel have successfully been fabricated by using newly developed orientation-dependent wet etching. The flexible V/sub th/ controllability by using one of the double gates as a control gate and by the synchronized driving mode operation is experimentally confirmed. The developed processes are attractive for the fabrication of the advanced separate-gates FinFET for a flexible function VLSI circuit.

Keywords

MOSFET; chemical mechanical polishing; etching; advanced separate-gates FinFET; fabrication process flow; fin-type MOSFET; flexible function VLSI circuit; flexible threshold voltage FinFET; ideal rectangular cross-section Si-Fin channel; independent double gates; orientation-dependent wet etching; synchronized driving mode operation; Aluminum; Fabrication; FinFETs; Glass; MOSFETs; Nanoelectronics; Shape; Threshold voltage; Voltage control; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269445

Filename

1269445