Title :
A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications
Author :
Schroter, Michael ; Kolev, P. ; Wang, Dongping ; Eron, Murat ; Lin, Shunjiang ; Samarakone, N. ; Bronikowski, M. ; Yu, Jinpeng ; Sampat, P. ; Sams, P. ; McKernan, S.
Author_Institution :
RFNano Corp, Newport Beach, United States
Abstract :
Summary form only given, as follows. Depletion-mode CNTFETs have been fabricated on 4″ wafers with a photostepper-based process. The transistors show significant current and power gain with peak (fT, fmax) values of (9, 10)GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973204
