1.6–2.1 GHz broadband Doherty power amplifiers for LTE handset applications

Summary form only given, as follows. A Doherty power amplifier (PA) for LTE applications is fully integrated on a 1.4mm × 1.4mm die using a 2-um InGaP/GaAs HBT process. For a LTE signal with a 7.5-dB PAPR and a 10-MHz BW, the PA with a supply voltage of 4.5 V delivers a PAE of 36.3 %, and an ACLR of −32 dBc with an average output power of 27.5 dBm at a frequency of 1.85 GHz. Across 1.6–2.1 GHz, the PA performs a PAE of over 30 %, a gain of over 28 dB and an ACLR of below −31 dBc at an average output power of 27.5 dBm.