DocumentCode :
259269
Title :
Formation of Microelectronics in Novosibirsk
Author :
Kostsov, Edward
Author_Institution :
Inst. of Autom. & Electrometry, Novosibirsk, Russia
fYear :
2014
fDate :
13-17 Oct. 2014
Firstpage :
92
Lastpage :
96
Abstract :
Memoirs on history of origin and development of researches in the field of microelectronics, technology of microelectronics in S.L. Sobolev Institute of Mathematics of the Siberian Branch and in Novosibirsk and electronic industrial enterprises of Novosibirsk are presented.
Keywords :
field effect integrated circuits; FET; S.L. Sobolev Institute of Mathematics; Siberian Branch; electronic industrial enterprises of Novosibirsk; field-effect transistor; microelectronics; Computers; Films; Laboratories; Mathematics; Microelectronics; Physics; Transistors; diode; field-effect transistor (FET); microelectronics; physics; technology; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Technology in Russia and in the Former Soviet Union (SoRuCom), 2014 Third International Conference on
Conference_Location :
Kazan
Type :
conf
DOI :
10.1109/SoRuCom.2014.28
Filename :
7032964
Link To Document :
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