DocumentCode
259269
Title
Formation of Microelectronics in Novosibirsk
Author
Kostsov, Edward
Author_Institution
Inst. of Autom. & Electrometry, Novosibirsk, Russia
fYear
2014
fDate
13-17 Oct. 2014
Firstpage
92
Lastpage
96
Abstract
Memoirs on history of origin and development of researches in the field of microelectronics, technology of microelectronics in S.L. Sobolev Institute of Mathematics of the Siberian Branch and in Novosibirsk and electronic industrial enterprises of Novosibirsk are presented.
Keywords
field effect integrated circuits; FET; S.L. Sobolev Institute of Mathematics; Siberian Branch; electronic industrial enterprises of Novosibirsk; field-effect transistor; microelectronics; Computers; Films; Laboratories; Mathematics; Microelectronics; Physics; Transistors; diode; field-effect transistor (FET); microelectronics; physics; technology; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Technology in Russia and in the Former Soviet Union (SoRuCom), 2014 Third International Conference on
Conference_Location
Kazan
Type
conf
DOI
10.1109/SoRuCom.2014.28
Filename
7032964
Link To Document