BiCMOS opto-electronic reception system for application in high-frequencies

Author

Martínez-Castillo, J. ; Díaz-Sánchez, A. ; Torres-Jácome, A. ; Murphy-Arteaga, R.S. ; Finol, J.L.

Author_Institution

Cinvestav, Unidad Guadalajara, Spain

fYear

2004

fDate

16-18 Feb. 2004

Firstpage

214

Lastpage

219

Abstract

Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, using negative feedback with the integration of a silicon photodiode, are discussed. Simulations were performed using BSIM3v3, modified BSIM3v3, and EKV models for high-frequency applications. Experimental and simulation results were performed for a 0.8 μm Si BiCMOS AMS process, using HSPICE and CADENCE simulators. Experimental results, obtained from S-parameters, show a transimpedance gain of 40 dB and a bandwidth of 1.9 GHz.

Keywords

BiCMOS analogue integrated circuits; HF amplifiers; S-parameters; feedback amplifiers; integrated circuit design; integrated circuit modelling; integrated optoelectronics; optical receivers; 0.8 micron; 1.9 GHz; 40 dB; BiCMOS opto-electronic receiver; CMOS transimpedance amplifier structures; EKV model; S-parameters; Si; circuit design; common-gate topology; modified BSIM3v3 model; negative feedback; opto-electronics integrated circuits; silicon photodiode; transimpedance gain; BiCMOS integrated circuits; Circuit simulation; Circuit topology; Gain; Negative feedback; Optoelectronic devices; Photodiodes; Scattering parameters; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Computers, 2004. CONIELECOMP 2004. 14th International Conference on

Print_ISBN

0-7695-2074-X

Type

conf

DOI

10.1109/ICECC.2004.1269575

Filename

1269575