• DocumentCode
    2593384
  • Title

    Highly linear 4.9–5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI

  • Author

    Huang, C.P. ; Nisbet, John ; Lam, Linh ; Doherty, M. ; Quaglietta, Anthony ; Vaillancourt, William

  • Author_Institution
    SiGe Semiconductor, Andover, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. A high linearity 4.9–5.9 GHz T/R front-end module (FEM) is presented. The FEM consists of a SiGe BiCMOS PA and a single-pole double-throw SOI switched LNA in a 3 × 3 × 0.6 mm QFN package. The Tx chain has 31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with −3 dBm IP1dB for LNA mode and 5 dB attenuation in bypass mode with 10 dBm IP1dB. All these features simplify designs of complex WLAN/MIMO radios.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973262
  • Filename
    5973262