DocumentCode
2593384
Title
Highly linear 4.9–5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI
Author
Huang, C.P. ; Nisbet, John ; Lam, Linh ; Doherty, M. ; Quaglietta, Anthony ; Vaillancourt, William
Author_Institution
SiGe Semiconductor, Andover, United States
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
1
Abstract
Summary form only given, as follows. A high linearity 4.9–5.9 GHz T/R front-end module (FEM) is presented. The FEM consists of a SiGe BiCMOS PA and a single-pole double-throw SOI switched LNA in a 3 × 3 × 0.6 mm QFN package. The Tx chain has 31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with −3 dBm IP1dB for LNA mode and 5 dB attenuation in bypass mode with 10 dBm IP1dB. All these features simplify designs of complex WLAN/MIMO radios.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5973262
Filename
5973262
Link To Document