DocumentCode :
2593417
Title :
Influence of blue-shifted energy in the spectrum for 1.5 μm AlInGaAs/InP MQW DFB lasers on dispersion penalty in 25 Gbit/s systems
Author :
Ranganathan, Raghu ; Lu, Hanh ; Burroughs, Scott ; Whitney, Peter ; Mirman, Ilya ; Scalesse, Vincent
Author_Institution :
Lasertron, Burlington, MA, USA
Volume :
2
fYear :
1996
fDate :
18-21 Nov 1996
Firstpage :
337
Abstract :
Chirp or wavelength shifts in distributed feedback (DFB) lasers have been the limiting factor in high bit rate transmission systems. Furthermore, dynamic chirp in direct modulation schemes results in pulse broadening because of the chromatic dispersion in the fiber leading to higher power penalties for the link. It is thus crucial to be able to unambiguously quantify the chirp component at the chip level with a quick and inexpensive method. Towards this, we present results of a set of measurements done to understand the extent of correlation between the observed chirp and the system´s dispersion penalty. Strained MQW DFB lasers fabricated in the AlInGaAs/InP system were used. The ratio of the conduction to the valence band offsets in the AlInGaAs/InP system is larger than in the InGaAsP/InP system. This is expected to provide better electron confinement minimizing leakage. Coupled with a MQW structure, uniform hole distribution across wells is possible thus enabling higher bandwidth. Different facet coating combinations were also included to provide a rich subset of the device dynamic properties for this study. The tested devices had a lasing wavelength between 1520-1550 nm. We have experimentally shown the existence of a correlation between the transient chirp in the leading edge of the light pulse and the observed dispersion penalty under 2.5 Gbit/s PRBS modulation. This offers a cost-effective solution to screen chips at the chip level without incurring costs associated with module level components. It is important to note, however, that this is a necessary but not sufficient screen due to issues like mode partition noise and timing jitter, which affect the overall power penalty
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; optical fibre communication; optical fibre dispersion; optical transmitters; quantum well lasers; 1.5 mum; 1520 to 1560 nm; 2.5 Gbit/s; AlInGaAs-InP; AlInGaAs/InP MQW DFB lasers; bandwidth; blue-shifted energy; chirp; chromatic dispersion; conduction to valence band offset ratio; direct modulation; dispersion penalty; distributed feedback; dynamic chirp; electron confinement; facet coating combinations; high bit rate transmission systems; leakage; mode partition noise; pulse broadening; screening; strained MQW DFB lasers; timing jitter; transient chirp; uniform hole distribution; wavelength shifts; Bit rate; Chirp modulation; Chromatic dispersion; Distributed feedback devices; Fiber lasers; Indium phosphide; Laser feedback; Pulse modulation; Quantum well devices; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
Type :
conf
DOI :
10.1109/LEOS.1996.571872
Filename :
571872
Link To Document :
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