DocumentCode :
2593732
Title :
Specific absorption rate of inductively powered brain implanted circuits
Author :
AL-Kalbani, Ahmed ; Yuce, Mehmet R. ; Redouté, Lean-Michel
Author_Institution :
Dept. of ECSE, Monash Univ., Clayton, VIC, Australia
fYear :
2012
fDate :
21-24 May 2012
Firstpage :
457
Lastpage :
460
Abstract :
This paper discusses the simulated exposure to a 5 MHz electromagnetic field powering implanted electronic devices using an inductive link. A high efficiency class-E transmitter circuit operating at 5 MHz has been designed. The circuit generates a 1 W to 5 W transmitted power by means of two possible planar primary coil designs, and powers 5 identical implants which are individually equipped with a secondary inductor. Simulations illustrate that a maximum localized SAR level (averaged over 10 g) of 1.16 W/kg is obtained in a rectangular bone structure with a thickness of 10 mm, when the power transmission is equal to 5 W.
Keywords :
biological effects of fields; biomedical electronics; bone; brain; coils; electromagnetic devices; prosthetics; electromagnetic field power; electronic device implant; frequency 1 MHz to 5 MHz; high efficiency cIass-E transmitter circuit; inductive link; inductively powered brain implanted circuits; maximum localized SAR level; planar primary coil designs; power transmission; rectangular bone structure; secondary inductor; size 10 mm; specific absorption rate; Coils; Copper; Implants; Magnetic devices; Reliability engineering; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1557-0
Electronic_ISBN :
978-1-4577-1558-7
Type :
conf
DOI :
10.1109/APEMC.2012.6237866
Filename :
6237866
Link To Document :
بازگشت