Title :
UHiFET - a new high-frequency High-Voltage device
Author :
Ezzeddine, A.K. ; Huang, Howard C. ; Singer, J.L.
Author_Institution :
AMCOM Communications, Gaithersburg, United States
Abstract :
Summary form only given, as follows. The HiFET (High-Impedance, High-Voltage FET) configuration is used to connect several semiconductor FETs both DC and RF in series. The HiFET power and efficiency degrade at high microwave frequencies (i.e. 3GHz) due to gate leakage currents. In this article, we propose a new configuration, the Universal HiFET (UHiFET), which uses an additional compensation to improve the power, efficiency and linearity of the original HiFET configuration at microwave and millimeter wave frequencies.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973295
