DocumentCode
2593968
Title
Rugged HBT Class-C power amplifiers with base-emitter clamping
Author
Luo, Xiaohua ; Halder, Sebastian ; Hwang, J.C.
Author_Institution
Lehigh University, Bethlehem, United States
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
1
Abstract
Summary form only given, as follows. The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3∶1 instead of 2∶1 mismatch in CW operation, and 2.5∶1 instead of 1.5:1 mismatch in pulse operation. The present approach is simple to implement and has negligible impact on overall amplifier output power, gain or efficiency.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5973296
Filename
5973296
Link To Document