A novel distributed amplifier with high gain, low noise and high output power in 0.18-µm CMOS technology

Summary form only given, as follows. A new distributed amplifier (DA) topology is proposed, and it makes wideband amplifier design give considerations to the gain, noise figure and output power simultaneously. From measurements, the DA has a small signal gain of 20.5 dB and 3-dB bandwidth of 35 GHz. The maximum OP1dB is 8.6 dBm and the noise figure is between 6.8 and 8 dB at frequency lower than 18 GHz. The circuit has the highest ratio of gain-bandwidth product to chip area and the highest figure of merit (FOM) in 0.18-µm CMOS.