• DocumentCode
    2594545
  • Title

    A Microwave Phase and Gain Controller with Segmented-Dual-Gate MESFETs in GaAs MMICs

  • Author

    Hwang, Y.C. ; Chen, Y.K.

  • Volume
    84
  • Issue
    1
  • fYear
    1984
  • fDate
    30803
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    A novel segmented-dual-gate MESFET device which provides precise gain control over broad microwave bandwidth by using prescribed gate-width-ratio is presented. The digitally-controlled precision microwave gain scaler has potential application as an ultra-wide band microwave attenuator or active microwave phase shifter. The design and test results of GaAs MMIC active attenuator and hybrid phase shifter are described.
  • Keywords
    Equivalent circuits; FETs; Gain control; Gallium arsenide; Geometry; Laboratories; MESFETs; MMICs; Microwave devices; Microwave technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1984.1113615
  • Filename
    1113615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2594545