A Novel Scheme of Optical Injection for Fast Gain Recovery in Semiconductor Optical Amplifier

We propose a novel scheme of transverse injection of assisted-light into the active region of a semiconductor optical amplifier through a transparent electrode, for fast gain recovery. Numerical results based on a well-established model for gain recovery show that the gain recovery is approximately eight times faster than the earlier reported scheme of counter-propagating assisted-light. The dependence of gain recovery on bias current and power of the assisted-light in the proposed scheme have been studied. The analysis also shows full gain recovery for the 40-GHz signal, and partial gain recovery for the 100-GHz signal.