Title :
EMC susceptibility study of low-dropout voltage regulator using a test chip
Author :
Wu Jian-fei ; Li Jian-cheng ; Shen Rong-jun ; Boyer, A. ; Sicard, Etienne ; Ben Dhia, S.
Author_Institution :
Sch. of Electron. Sci. & Eng., NUDT, Changsha, China
Abstract :
In this paper, a test chip is introduced to study the susceptibility of low dropout voltage regulator (LDO) by direct RF power injection (DPI) method. The structure and failure mechanism of LDO module is analyzed. Both of hardware and software DPI set-up are given to characterize the test flow. A novel test method of on-chip sensor sampling is described by the functional frame and sampling arithmetic. Power distribution network (PDN) model is extracted which has a good match to S parameter test. The DPI test results by on-chip sensor are used to compare the traditional external DPI test methods especially to reveal the real immunity level in high frequency domain. The susceptibility level is analyzed which will be used for modeling work.
Keywords :
distribution networks; electromagnetic compatibility; voltage regulators; DPI test methods; EMC susceptibility; LDO module mechanism; PDN model; S parameter test; direct RF power injection method; functional frame; hardware DPI set-up; low-dropout voltage regulator; modeling work; on-chip sensor sampling test method; power distribution network; sampling arithmetic; software DPI set-up; test chip; Electromagnetic interference; Frequency measurement; Regulators; Semiconductor device measurement; System-on-a-chip; Voltage control; Voltage measurement; DPI; EMC; Failure mechanism; Immunity level; LDO; On-chip sensor; PDN; S parameter; Sampling arithmetic; Susceptibility;
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1557-0
Electronic_ISBN :
978-1-4577-1558-7
DOI :
10.1109/APEMC.2012.6237941